QPD1025L

Manufacturer No:QPD1025L

Manufacturer:Qorvo

Type:RF JFET Transistors

Description:RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	1 GHz to 1.1 GHz
Gain:	22.9 dB
Id - Continuous Drain Current:	28 A
Output Power:	1.5 kW
Maximum Drain Gate Voltage:	225 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	758 W
Mounting Style:	SMD/SMT
Package / Case:	NI-1230-4
Packaging:	Tray
Application:	Avionics IFF Transponders
Brand:	Qorvo
Configuration:	Dual Gate Dual Drain
Development Kit:	QPD1025LEVB1
Moisture Sensitive:	Yes
Product Type:	RF JFET Transistors
Series:	QPD1025L
other:	18
Subcategory:	Transistors
Unit Weight:	1.399148 oz