QPD1004SR

Manufacturer No:QPD1004SR

Manufacturer:Qorvo

Type:RF JFET Transistors

Description:RF JFET Transistors .03-1.2GHz 25W 50V GaN

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	30 MHz to 1.2 GHz
Gain:	20.8 dB
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	50 V
Vgs - Gate-Source Breakdown Voltage:	145 V
Id - Continuous Drain Current:	3.6 A
Output Power:	40 W
Maximum Drain Gate Voltage:	55 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	27.6 W
Mounting Style:	SMD/SMT
Package / Case:	DFN-8
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	Qorvo
Development Kit:	QPD1004EVB1
Forward Transconductance - Min:	-
Moisture Sensitive:	Yes
Product Type:	RF JFET Transistors
Series:	QPD1004
other:	100
Subcategory:	Transistors
Part # Aliases:	QPD1004
Unit Weight:	0.162567 oz