TGF3015-SM

Manufacturer No:TGF3015-SM

Manufacturer:Qorvo

Type:RF JFET Transistors

Description:RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	30 MHz to 3 GHz
Gain:	17.1 dB
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	32 V
Vgs - Gate-Source Breakdown Voltage:	- 2.7 V
Id - Continuous Drain Current:	557 mA
Output Power:	11 W
Pd - Power Dissipation:	15.3 W
Mounting Style:	SMD/SMT
Package / Case:	QFN-EP-16
Packaging:	Tray
Brand:	Qorvo
Configuration:	Single
Development Kit:	TGF3015-SM-EVB1
Moisture Sensitive:	Yes
Product Type:	RF JFET Transistors
Series:	TGF3015
other:	100
Subcategory:	Transistors
Part # Aliases:	TGF3015 1120419
Unit Weight:	0.237911 oz