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    • TGF3015-SM

      Manufacturer No:TGF3015-SM

      Manufacturer:Qorvo

      Type:RF JFET Transistors

      Description:RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN

      RFQ

    Specifications

    Product Attribute Attribute Value
    Manufacturer: Qorvo
    Product Category: RF JFET Transistors
    RoHS:  Details
    Transistor Type: HEMT
    Technology: GaN-on-SiC
    Operating Frequency: 30 MHz to 3 GHz
    Gain: 17.1 dB
    Transistor Polarity: N-Channel
    Vds - Drain-Source Breakdown Voltage: 32 V
    Vgs - Gate-Source Breakdown Voltage: - 2.7 V
    Id - Continuous Drain Current: 557 mA
    Output Power: 11 W
    Pd - Power Dissipation: 15.3 W
    Mounting Style: SMD/SMT
    Package / Case: QFN-EP-16
    Packaging: Tray
    Brand: Qorvo
    Configuration: Single
    Development Kit: TGF3015-SM-EVB1
    Moisture Sensitive: Yes
    Product Type: RF JFET Transistors
    Series: TGF3015
    other: 100
    Subcategory: Transistors
    Part # Aliases: TGF3015 1120419
    Unit Weight: 0.237911 oz

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