QPD1017

Manufacturer No:QPD1017

Manufacturer:Qorvo

Type:RF JFET Transistors

Description:RF JFET Transistors 3.1-3.5 GHz450W50V GaN RF IMFET

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
Shipping Restrictions:
RoHS:
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	3.1 GHz to 3.5 GHz
Gain:	15.7 dB
Transistor Polarity:	N-Channel
Id - Continuous Drain Current:	20 A
Output Power:	460 W
Maximum Drain Gate Voltage:	55 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	511 W
Mounting Style:	SMD/SMT
Package / Case:	17.4 mm x 24 mm x 4.31 mm
Brand:	Qorvo
Configuration:	Single
Development Kit:	QPD1017PCB4B01
Moisture Sensitive:	Yes
Product Type:	RF JFET Transistors
Series:	QPD1017
other:	18
Subcategory:	Transistors