2SK3476(TE12L,Q)

Manufacturer No:2SK3476(TE12L,Q)

Manufacturer:Toshiba

Type:RF MOSFET Transistors

Description:RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Toshiba
Product Category:	RF MOSFET Transistors
RoHS:
Transistor Polarity:	N-Channel
Technology:	Si
Id - Continuous Drain Current:	3 A
Vds - Drain-Source Breakdown Voltage:	20 V
Rds On - Drain-Source Resistance:	-
Operating Frequency:	520 MHz
Gain:	11.4 dB
Output Power:	7 W
Minimum Operating Temperature:	-
Maximum Operating Temperature:	+ 150 C
Mounting Style:	SMD/SMT
Package / Case:	PW-X-4
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	Toshiba
Configuration:	Single
Pd - Power Dissipation:	20 W
Product Type:	RF MOSFET Transistors
Series:	2SK3476
other:	1000
Subcategory:	MOSFETs
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	10 V
Vgs th - Gate-Source Threshold Voltage:	1.05 V
Unit Weight:	0.002822 oz