QPD1022SR

Manufacturer No:QPD1022SR

Manufacturer:Qorvo

Type:RF JFET Transistors

Description:RF JFET Transistors DC-12GHz 10W 32V GaN

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	DC to 12 GHz
Gain:	24 dB
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	32 V
Vgs - Gate-Source Breakdown Voltage:	- 2.8 V
Id - Continuous Drain Current:	610 mA
Output Power:	10 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	13.8 W
Mounting Style:	SMD/SMT
Package / Case:	QFN-16
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	Qorvo
Development Kit:	QPD1022EVB01
Moisture Sensitive:	Yes
Product Type:	RF JFET Transistors
Series:	QPD1022
other:	100
Subcategory:	Transistors
Part # Aliases:	QPD1022