QPD1008L

Manufacturer No:QPD1008L

Manufacturer:Qorvo

Type:RF JFET Transistors

Description:RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	3.2 GHz
Gain:	17.5 dB
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	50 V
Vgs - Gate-Source Breakdown Voltage:	145 V
Id - Continuous Drain Current:	4 A
Output Power:	162 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	127 W
Mounting Style:	Screw Mount
Package / Case:	NI-360
Packaging:	Tray
Brand:	Qorvo
Configuration:	Single
Development Kit:	QPD1008LPCB401
Moisture Sensitive:	Yes
Operating Temperature Range:	- 40 C to + 85 C
Product Type:	RF JFET Transistors
Series:	QPD1008L
other:	25
Subcategory:	Transistors
Vgs th - Gate-Source Threshold Voltage:	- 2.8 V