BFU730LXZ

Manufacturer No:BFU730LXZ

Manufacturer:NXP

Type:RF Bipolar Transistors

Description:RF Bipolar Transistors SiGe:C MMIC Transistor

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	NXP
Product Category:	RF Bipolar Transistors
RoHS:
Series:	BFU730LX
Transistor Type:	Bipolar Wideband
Technology:	SiGe
Transistor Polarity:	NPN
Operating Frequency:	53 GHz
DC Collector/Base Gain hfe Min:	205
Collector- Emitter Voltage VCEO Max:	10 V
Emitter- Base Voltage VEBO:	1.3 V
Continuous Collector Current:	5 mA
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 150 C
Configuration:	Single
Mounting Style:	SMD/SMT
Package / Case:	SOT-883C-3
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	NXP Semiconductors
Maximum DC Collector Current:	30 mA
Output Power:	11.7 dBm
Pd - Power Dissipation:	160 mW
Product Type:	RF Bipolar Transistors
other:	10000
Subcategory:	Transistors
Part # Aliases:	934066878225
Unit Weight:	0.000022 oz