IXFN110N85X

Manufacturer No:IXFN110N85X

Manufacturer:IXYS

Type:Discrete Semiconductor Modules

Description:Discrete Semiconductor Modules 850V X-Class HiPerFE Power MOSFET

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	IXYS
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	Power MOSFET Modules
Type:	HiperFET
Technology:	Si
Vgs - Gate-Source Voltage:	- 30 V + 30 V
Mounting Style:	Screw Mounts
Package / Case:	SOT-227-4
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	11 ns
Id - Continuous Drain Current:	110 A
Number of Channels:	1 Channel
Pd - Power Dissipation:	1.17 kW
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	33 mOhms
Rise Time:	25 ns
other:	10
Subcategory:	Discrete Semiconductor Modules
Tradename:	HiPerFET
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	144 ns
Typical Turn-On Delay Time:	50 ns
Vds - Drain-Source Breakdown Voltage:	850 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Unit Weight:	1.058219 oz