Manufacturer No:IXFN132N50P3
Manufacturer:IXYS
Type:Discrete Semiconductor Modules
Description:Discrete Semiconductor Modules 500V 112A 0.039Ohm PolarP3 Power MOSFET
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| Product Attribute | Attribute Value |
|---|---|
| Manufacturer: | IXYS |
| Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details |
| Product: | Power MOSFET Modules |
| Type: | HiperFET |
| Technology: | Si |
| Vgs - Gate-Source Voltage: | - 30 V + 30 V |
| Mounting Style: | Screw Mounts |
| Package / Case: | SOT-227-4 |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | IXFN132N50 |
| Packaging: | Tube |
| Brand: | IXYS |
| Configuration: | Single |
| Fall Time: | 8 ns |
| Id - Continuous Drain Current: | 112 A |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 1.5 kW |
| Product Type: | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance: | 39 mOhms |
| Rise Time: | 9 ns |
| other: | 10 |
| Subcategory: | Discrete Semiconductor Modules |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Unit Weight: | 1.058219 oz |
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Hong Kong: 852-26713361
Shen Zhen: 0755-21913499
Email:sales@sanxi-pro.com






