BSM600D12P3G001

Manufacturer No:BSM600D12P3G001

Manufacturer:ROHM Semiconductor

Type:Discrete Semiconductor Modules

Description:Discrete Semiconductor Modules 1200V 576A HALF BRIDGE SIC

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	ROHM Semiconductor
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	Power MOSFET Modules
Type:	SiC Power Module
Technology:	SiC
Vr - Reverse Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	- 6 V + 22 V
Mounting Style:	Screw Mounts
Package / Case:	Module
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Brand:	ROHM Semiconductor
Fall Time:	55 ns
Id - Continuous Drain Current:	358 A
Operating Supply Voltage:	-
Pd - Power Dissipation:	1.57 kW
Product Type:	Discrete Semiconductor Modules
Rise Time:	55 ns
other:	4
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	240 ns
Typical Turn-On Delay Time:	45 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Unit Weight:	1.131 lbs