QPD1015L

Manufacturer No:QPD1015L

Manufacturer:Qorvo

Type:RF JFET Transistors

Description:RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	HEMT
Technology:	GaN-on-SiC
Operating Frequency:	3.7 GHz
Gain:	20 dB
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	50 V
Vgs - Gate-Source Breakdown Voltage:	145 V
Id - Continuous Drain Current:	2.5 A
Output Power:	70 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	64 W
Mounting Style:	Screw Mount
Package / Case:	NI-360
Packaging:	Tray
Brand:	Qorvo
Configuration:	Single
Development Kit:	QPD1015LPCB401
Moisture Sensitive:	Yes
Operating Temperature Range:	- 40 C to + 85 C
Product Type:	RF JFET Transistors
Series:	QPD1015L
other:	25
Subcategory:	Transistors
Vgs th - Gate-Source Threshold Voltage:	- 2.8 V
Unit Weight:	0.809714 oz