RFM04U6P(TE12L,F)

Manufacturer No:RFM04U6P(TE12L,F)

Manufacturer:Toshiba

Type:RF MOSFET Transistors

Description:RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 2A 7W 16V

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Toshiba
Product Category:	RF MOSFET Transistors
RoHS:
Transistor Polarity:	N-Channel
Technology:	Si
Id - Continuous Drain Current:	2 A
Vds - Drain-Source Breakdown Voltage:	16 V
Rds On - Drain-Source Resistance:	-
Operating Frequency:	470 MHz
Gain:	13.3 dB
Output Power:	4.3 W
Minimum Operating Temperature:	-
Maximum Operating Temperature:	+ 150 C
Mounting Style:	SMD/SMT
Package / Case:	PW-Mini-3
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	Reel
Brand:	Toshiba
Configuration:	Single
Pd - Power Dissipation:	7 W
Product Type:	RF MOSFET Transistors
Series:	RFM04
other:	1000
Subcategory:	MOSFETs
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	3 V
Vgs th - Gate-Source Threshold Voltage:	700 mV
Unit Weight:	0.001764 oz