IXTN200N10L2

Manufacturer No:IXTN200N10L2

Manufacturer:IXYS

Type:Discrete Semiconductor Modules

Description:Discrete Semiconductor Modules Linear L2 Pwr MOSFET w/Extended FBSOA

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	IXYS
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	Power MOSFET Modules
Type:	Linear Power MOSFET
Technology:	Si
Vr - Reverse Voltage:	50 V
Vgs - Gate-Source Voltage:	- 20 V + 20 V
Mounting Style:	Chassis Mount
Package / Case:	SOT-227-4
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	IXTN200N10
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Id - Continuous Drain Current:	178 A
Number of Channels:	1 Channel
Pd - Power Dissipation:	830 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	11 mOhms
other:	10
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Unit Weight:	1.058219 oz