IXTN660N04T4

Manufacturer No:IXTN660N04T4

Manufacturer:IXYS

Type:Discrete Semiconductor Modules

Description:Discrete Semiconductor Modules 40V/660A TrenchT4 Power MOSFET

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	IXYS
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	Power MOSFET Modules
Type:	Trench
Technology:	Si
Vr - Reverse Voltage:	30 V
Vgs - Gate-Source Voltage:	- 15 V + 15 V
Mounting Style:	Chassis Mount
Package / Case:	SOT-227-4
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	Gen4
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	260 ns
Id - Continuous Drain Current:	660 A
Number of Channels:	1 Channel
Pd - Power Dissipation:	1.04 mW
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	850 uOhms
Rise Time:	430 ns
other:	10
Subcategory:	Discrete Semiconductor Modules
Tradename:	HiPerFET
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	386 ns
Typical Turn-On Delay Time:	40 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Unit Weight:	1.058219 oz