IXFN200N10P

Manufacturer No:IXFN200N10P

Manufacturer:IXYS

Type:Discrete Semiconductor Modules

Description:Discrete Semiconductor Modules 200 Amps 100V 0.0075 Rds

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	IXYS
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	Power MOSFET Modules
Type:	HiperFET
Technology:	Si
Vgs - Gate-Source Voltage:	- 20 V + 20 V
Mounting Style:	Screw Mounts
Package / Case:	SOT-227-4
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	IXFN200N10
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	90 ns
Height:	9.6 mm
Id - Continuous Drain Current:	200 A
Length:	38.23 mm
Number of Channels:	1 Channel
Pd - Power Dissipation:	680 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	7.5 mOhms
Rise Time:	35 ns
other:	10
Subcategory:	Discrete Semiconductor Modules
Tradename:	HiPerFET
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	150 ns
Typical Turn-On Delay Time:	30 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Width:	25.42 mm
Unit Weight:	1.058219 oz