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    • BSM250D17P2E004

      Manufacturer No:BSM250D17P2E004

      Manufacturer:ROHM Semiconductor

      Type:Discrete Semiconductor Modules

      Description:Discrete Semiconductor Modules 1700V Vdss; 250A Id SiC Pwr Module

      RFQ

    Specifications

    Product Attribute Attribute Value
    Manufacturer: ROHM Semiconductor
    Product Category: Discrete Semiconductor Modules
    RoHS:  Details
    Product: Power MOSFET Modules
    Type: SiC Power Module
    Technology: SiC
    Vr - Reverse Voltage: 1.2 kV
    Vgs - Gate-Source Voltage: - 6 V + 22 V
    Mounting Style: Screw Mounts
    Package / Case: Module
    Minimum Operating Temperature: - 40 C
    Maximum Operating Temperature: + 150 C
    Series: BSMx
    Packaging: Bulk
    Brand: ROHM Semiconductor
    Configuration: Half-Bridge
    Fall Time: 70 ns
    Id - Continuous Drain Current: 250 A
    Pd - Power Dissipation: 1.8 kW
    Product Type: Discrete Semiconductor Modules
    Rise Time: 55 ns
    other: 4
    Subcategory: Discrete Semiconductor Modules
    Transistor Polarity: N-Channel
    Typical Delay Time: 55 ns
    Typical Turn-Off Delay Time: 195 ns
    Typical Turn-On Delay Time: 55 ns
    Vds - Drain-Source Breakdown Voltage: 1.7 kV
    Vgs th - Gate-Source Threshold Voltage: 1.6 V
    Unit Weight: 1.274 lbs

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