IXFN80N50Q3

Manufacturer No:IXFN80N50Q3

Manufacturer:IXYS

Type:Discrete Semiconductor Modules

Description:Discrete Semiconductor Modules Q3Class HiPerFET Pwr MOSFET 500V/63A

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	IXYS
Product Category:	Discrete Semiconductor Modules
RoHS:
Technology:	Si
Vgs - Gate-Source Voltage:	- 30 V + 30 V
Mounting Style:	Chassis Mount
Package / Case:	SOT-227-4
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Id - Continuous Drain Current:	63 A
Number of Channels:	1 Channel
Pd - Power Dissipation:	780 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	65 mOhms
Rise Time:	250 ns
other:	300
Subcategory:	Discrete Semiconductor Modules
Tradename:	HiPerFET
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Unit Weight:	1.058219 oz