Manufacturer No:MSCSM120DDUM31CTBL2NG
Manufacturer:Microchip
Type:Discrete Semiconductor Modules
Description:Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL2
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Product Attribute | Attribute Value |
---|---|
Manufacturer: | Microchip |
Product Category: | Discrete Semiconductor Modules |
RoHS: | Details |
Product: | Power MOSFET Modules |
Type: | Double Dual Common Source SiC MOSFET Power Module |
Technology: | SiC |
Vf - Forward Voltage: | 1.5 V at 30 A |
Vr - Reverse Voltage: | 1.2 kV |
Vgs - Gate-Source Voltage: | - 10 V 25 V |
Mounting Style: | Screw Mounts |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Brand: | Microchip Technology |
Configuration: | Double Dual Common Source |
Fall Time: | 25 ns |
Id - Continuous Drain Current: | 79 A |
Pd - Power Dissipation: | 310 W |
Product Type: | Discrete Semiconductor Modules |
Rds On - Drain-Source Resistance: | 31 mOhms |
Rise Time: | 30 ns |
other: | 1 |
Subcategory: | Discrete Semiconductor Modules |
Transistor Polarity: | N-Channel |
Typical Turn-Off Delay Time: | 50 ns |
Typical Turn-On Delay Time: | 30 ns |
Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
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