A1F25M12W2-F1

Manufacturer No:A1F25M12W2-F1

Manufacturer:STMicroelectronics

Type:Discrete Semiconductor Modules

Description:Discrete Semiconductor Modules ACEPACK 1 power module fourpack topology 1200 V 25 mOhm typ. SiC MOSFET NTC

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	STMicroelectronics
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	Power MOSFET Modules
Technology:	SiC
Vgs - Gate-Source Voltage:	- 10 V to + 22 V
Mounting Style:	Press Fit
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tray
Brand:	STMicroelectronics
Id - Continuous Drain Current:	50 A
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	34 mOhms
other:	18
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	24 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	4.9 V
Unit Weight:	0.881849 oz