NXH020U90MNF2PTG

Manufacturer No:NXH020U90MNF2PTG

Manufacturer:onsemi

Type:Discrete Semiconductor Modules

Description:Discrete Semiconductor Modules SiC Modules Vienna Module 900V 2 x 10 mohm SiC MOSFET 1200V 2 x 100A F2 Package

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	onsemi
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	Power MOSFET Modules
Type:	SiC MOSFET Module
Technology:	SiC
Vf - Forward Voltage:	2.3 V
Vr - Reverse Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	- 8 V 18 V
Mounting Style:	Press Fit
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Series:	NXH020U90MNF2
Packaging:	Tray
Brand:	onsemi
Configuration:	Dual Common Source
Fall Time:	12.8 ns
Id - Continuous Drain Current:	149 A
Pd - Power Dissipation:	352 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	14 mOhms
Rise Time:	19.8 ns
other:	20
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	110 ns
Typical Turn-On Delay Time:	43.2 ns
Vds - Drain-Source Breakdown Voltage:	900 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V