MSCSM120DHM31CTBL2NG

Manufacturer No:MSCSM120DHM31CTBL2NG

Manufacturer:Microchip

Type:Discrete Semiconductor Modules

Description:Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL2

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Microchip
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	Power MOSFET Modules
Type:	Asymmetrical Bridge SiC MOSFET Power Module
Technology:	SiC
Vf - Forward Voltage:	1.5 V at 30 A
Vr - Reverse Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	- 10 V 25 V
Mounting Style:	Screw Mounts
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Brand:	Microchip Technology
Configuration:	Asymmetrical Bridge
Fall Time:	25 ns
Id - Continuous Drain Current:	79 A
Pd - Power Dissipation:	310 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	31 mOhms
Rise Time:	30 ns
other:	1
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	30 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	1.8 V