A5G35H120NT2

Manufacturer No:A5G35H120NT2

Manufacturer:NXP

Type:RF MOSFET Transistors

Description:RF MOSFET Transistors Airfast RF Power GaN Transistor 3300 3800 MHz 18 W Avg. 48 V

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	NXP
Product Category:	RF MOSFET Transistors
Shipping Restrictions:
RoHS:
Transistor Polarity:	N-Channel
Technology:	GaN Si
Id - Continuous Drain Current:	10 mA
Vds - Drain-Source Breakdown Voltage:	125 V
Rds On - Drain-Source Resistance:	-
Operating Frequency:	3.3 GHz to 3.7 GHz
Gain:	14.1 dB
Output Power:	18 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Mounting Style:	SMD/SMT
Package / Case:	DFN-10
Packaging:	Reel
Packaging:	Cut Tape
Brand:	NXP Semiconductors
Number of Channels:	1 Channel
Product Type:	RF MOSFET Transistors
Series:	A5G35H120N
other:	2000
Subcategory:	MOSFETs
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	- 8 V
Vgs th - Gate-Source Threshold Voltage:	- 4.6 V
Part # Aliases:	935432729518