BSM120D12P2C005

Manufacturer No:BSM120D12P2C005

Manufacturer:ROHM Semiconductor

Type:Discrete Semiconductor Modules

Description:Discrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	ROHM Semiconductor
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	Power MOSFET Modules
Type:	SiC Power Module
Technology:	SiC
Vr - Reverse Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	- 6 V + 22 V
Mounting Style:	Screw Mounts
Package / Case:	Module
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Series:	BSMx
Packaging:	Bulk
Brand:	ROHM Semiconductor
Configuration:	Half-Bridge
Fall Time:	60 ns
Height:	21.1 mm
Id - Continuous Drain Current:	134 A
Length:	122 mm
Number of Channels:	1 Channel
Pd - Power Dissipation:	935 W
Product Type:	Discrete Semiconductor Modules
Rise Time:	50 ns
other:	12
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Typical Delay Time:	45 ns
Typical Turn-Off Delay Time:	170 ns
Typical Turn-On Delay Time:	45 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Width:	45.6 mm
Unit Weight:	9.856004 oz